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P Mosfet Horizontal Output High Power Transistor SOT323 3D 3H 3M RoHS Approval

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P Mosfet Horizontal Output High Power Transistor SOT323 3D 3H 3M RoHS Approval

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Brand Name : CANYI

Model Number : BC856W BC857W BC858W

Certification : RoHS

Place of Origin : Guangdong, China

MOQ : 1000PCS

Price : Negotiated

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 15,000,000PCS Per Day

Delivery Time : 3-5 days

Packaging Details : Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms

Type : plastic Transistor

Package : SOT-323

TJ, Tstg : -65 to 150℃

Shipping by : DHL\UPS\Fedex\EMS\HK Post

Lead time : 2-3days

Application : For VCD, DVD, calculator, etc.

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p mosfet horizontal output transistor SOT323 3D 3H 3M field effect transistor

TYPE NUMBERMARKING CODE:
BC856W: 3D*
BC856AW: 3A*
BC856BW: 3B*
BC857W: 3H*
BC857AW: 3E*
BC857BW: 3F*
BC857CW: 3G*
BC858W: 3M*
Field effect transistor features:

  1. Low current(max.100mA)
  2. Low voltage(max.65V)
  3. base-emitter voltage:-600~-700mV
  4. collector capacitance:3pF; emitter capacitance=12pF
  5. hFE=125-800
  6. noise figure=10dB
Power field effect transistor description:
  1. PNP transistor in a SOT-323 plastic package.
  2. NPN complements: BC846W, BC847W and BC848W.

Horizontal output transistor applications:

  1. General purpose switching and amplification.
  2. It can convert AC power into pulse DC power in a single direction, equivalent to a rectifier diode
  3. After the diode is turned on, the forward voltage drop remains basically unchanged, which can limit the signal amplitude to a certain
  4. Plays a role in the inductive load of switching power supply and inductive load such as relay.

CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT
collector-base voltage VCBO open emitter
BC856W − −80 V
BC857W − −50 V
BC858W − −30 V
collector-emitter voltage VCEO open base
BC856W − −65 V
BC857W − −45 V
BC858W − −30 V
emitter-base voltage VEBO open collector − −5 V
collector current (DC) IC − −100 mA
peak collector current ICM − −200 mA
peak base current IBM − −200 mA
total power dissipation Ptot Tamb ≤ 25 °C; note 1 − 200 mW
storage temperature Tstg −65 +150 °C
junction temperature Tj − 150 °C
operating ambient temperature Tamb −65 +150 °C

Note

  1. Refer to SOT323 standard mounting conditions.

CHARACTERISTICS Tamb = 25 °C; unless otherwise specified.

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT
collector-base cut-off current ICBO VCB = −30 V; IE = 0 − −1 −15 nA

VCB = −30 V; IE = 0;

Tj = 150 °C

 − − −4 μA
emitter-base cut-off current IEBO VEB = −5 V; IC = 0 − − −100 nA
DC current gain hFE IC = −2 mA; VCE = −5 V
BC856W 125 − 475
BC857W; BC858W 125 − 800
BC856AW; BC857AW 125 − 250
BC856BW; BC857BW 220 − 475
BC857CW 420 − 800
collector-emitter saturation voltage VCEsat IC = −10 mA; IB = −0.5 mA − −75 −300 mV
IC = −100 mA; IB = −5 mA;note 1 − −250 −600 mV
base-emitter saturation voltage VBEsat IC = −10 mA; IB = −0.5 mA − −700 − mV
IC = −100 mA; IB = −5 mA;note 1 − −850 − mV
base-emitter voltage VBE IC = −2 mA; VCE = −5 V −600 −650 −750 mV
IC = −10 mA; VCE = −5 V − − −820 mV
collector capacitance Cc VCB = −10 V; IE = Ie = 0;f = 1 MHz − − 3 pF
emitter capacitance Ce VEB = −0.5 V; IC = Ic = 0;f = 1 MHz − − 12 pF
transition frequency fT VCE = −5 V; IC = −10 mA;f = 100 MHz 100 − − MHz
noise figure F IC = −200 μA; VCE = −5 V;RS = 2 kΩ; f = 1 kHz;B = 200 Hz − − 10

dB

Note:

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.


Contact:Wendy Yan
Email:wendy@doublelight.com.cn
Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn
Whatsapp:+86 13423609933


Product Tags:

mosfet power transistor

      

high power transistor

      
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